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| 2SJ537 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSVI) 2 2SJ537 Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance High forward transfer admittance : RDS (ON) = 0.16 (typ.) : |Yfs| = 3.5 S (typ.) Unit: mm Low leakage current : IDSS = -100 A (VDS = -50 V) Enhancement-mode : Vth = -0.8~-2.0 V (VDS = -10 V, ID = -1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating -50 -50 20 -5 -15 0.9 150 -55~150 Unit V V V A A W C C JEDEC JEITA TOSHIBA TO-92MOD 2-5J1C Pulse (Note 1) Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth (ch-a) Max 138 Unit C / W Note 1: Please use devices on condition that the channel temperature is below 150C. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2006-11-16 2SJ537 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time tf -- 20 -- Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -50 V, VGS = 0 V ID = -10 mA, VGS = 0 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -1.3 A VGS = -10 V, ID = -2.5 A VDS = -10 V, ID = -2.5 A Min -- -- -50 -0.8 -- -- 1.5 -- -- -- -- -- Typ. -- -- -- -- 0.27 0.16 3.5 470 60 210 25 35 Max 10 -100 -- -2.0 0.34 0.19 -- -- -- -- -- -- ns pF Unit A A V V S Turn-off time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd VDD -40 V, VGS = -10 V, ID = -5 A -- 120 -- -- -- -- 18 13 5 -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Symbol IDR IDRP VDSF Test Condition -- -- IDR = -5 A, VGS = 0 V Min -- -- -- Typ. -- -- -- Max -5 -15 1.5 Unit A A V Marking J537 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ537 ID - VDS -5 Common source Ta = 25C Pulse Test -10 -5 -10 -4 -8 -8 -6 -10 ID - VDS -5 -4 ID -3 ID -8 -6 -3.5 -6 Common source Ta = 25C Pulse Test -4 (A) Drain current -2 -3 -1 VGS = -2.5V 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Drain current (A) -4 -3.5 -2 -3 VGS = -2.5 V 0 0 -2 -4 -6 -8 -10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -10 Ta = -55C -8 25 100 -6 Common source VDS = -10 V Pulse Test -2.0 VDS - VGS Common source Ta = 25 Pulse Test (V) VDS Drain-source voltage -1.6 ID (A) -1.2 ID = -5 A -0.8 -2.5 -0.4 -1.3 Drain current -4 -2 0 0 -2 -4 -6 -8 -10 0 0 -4 -8 -12 -16 -20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 10 Ta = -55C 10 Common source Ta = 25C Pulse Test RDS (ON) - ID Forward transfer admittance Yfs (S) 25 100 Drain-source ON resistance RDS (ON) () 1 VGS = -4 V -10 0.1 1 Common source VDS = -10 V Pulse Test 0.1 -0.1 -1 -10 -100 0.01 -0.1 -1 -10 -100 Drain current ID (A) Drain current ID (A) 3 2006-11-16 2SJ537 RDS (ON) - Ta 1.0 Common source Pulse Test -100 Common source Ta = 25C Pulse Test IDR - VDS Drain-source ON resistance RDS (ON) ( ) 0.8 Drain reverse current IDR (A) -10 -5 -10 -1 -3 0.6 1.3 0.4 VGS = 4 V ID = 2.5A 5 0.2 -1.3 0 -80 VGS = 10 V -40 0 40 80 120 160 -2.5 -1 -0.1 0 0.4 VGS = 0 V 0.8 1.2 1.6 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 Common source VGS = 0 V f = 1 MHz Ta = 25C -2.0 Vth - Ta (pF) 1000 Ciss Capacitance C Gate threshold voltage Vth (V) -1.6 -1.2 Coss 100 Crss -0.8 Common source -0.4 VDS = -10 V ID = -1mA Pulse Test -40 0 40 80 120 160 10 -0.1 -1 -10 -100 0 -80 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 1.6 -80 Dynamic input / output characteristics Common source ID = -5 A Ta = 25C Pulse Test -20 (V) Drain power dissipation PD (W) 1.2 Drain-source voltage VDS -60 -15 0.8 -40 VDS -10V VDD = -40V -10 -20V -20 VGS -5 0.4 0 0 40 80 120 160 0 0 10 20 30 0 Ambient temperature Ta (C) Total gate charge Qg (nC) 4 2006-11-16 Gate-source voltage VGS (V) 2SJ537 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-a) 1 0.1 0.01 Duty=t/T Single Pulse 0.001 100 1m 10m 100m 1 Rth(ch-a)=138/W 10 100 Pulse width tw (S) SAFE OPERATING AREA -100 ID max (pulse)* -10 100 s * (A) IDmax (continuous) 1 ms * Drain current ID -1 DC OPEATION Ta =25C -0.1 Single pulse Ta=25 Curves must be derated linearly with increase in temperature. VDSS max -0.01 -0.01 -0.1 -1 -10 -100 Drain-source voltage VDS (V) 5 2006-11-16 2SJ537 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-16 |
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